ASMPT has developed a proprietary process with a unique V-DOE Multi beam process for dicing of thin silicon (<<100 µm) wafers with a low CoO while achieving a high die strength (typically >500 MPa). Read more
ASMPT has developed a proprietary process with a unique V-DOE Multi beam process for dicing of thin silicon (<<100 µm) wafers with a low CoO while achieving a high die strength (typically >500 MPa). Read more