Advanced semiconductor manufacturing necessitates control at every stage of the fabrication process, with etch processes being among the most critical to perform with precision. Even a microscopic deviation at a material interface can impact device performance, yield, and long-term reliability. Secondary Ion Mass Spectrometry (SIMS)-based end point detection has emerged as a dependable way to determine exactly when an etch process should stop, helping engineers maintain tight process windows and safeguard device integrity. Read more
